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參數(shù)資料
| 型號： | SEMB10 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | PNP Silicon Digital Transistor Array Preliminary data |
| 中文描述： | 進(jìn)步黨硅數(shù)字晶體管陣列的初步數(shù)據(jù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 143K |
| 代理商： | SEMB10 |
SEMB10
Mar-01-2004
1
PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistors (
R
1=2,2k
,
R
2 =47k
)
1
3
6
5
4
2
EHA07173
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
Type
SEMB10
Marking
W5
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Value
50
Unit
V
Collector-base voltage
50
Emitter-base voltage
5
Input on Voltage
10
DC collector current
100
250
mA
mW
Total power dissipation
,
T
S
= 75 °C
Junction temperature
150
°C
Storage temperature
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
300
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SEMB11 | PNP Silicon Digital Transistor Array Preliminary data |
| SEMB1 | PNP Silicon Digital Transistor Array Preliminary data |
| SEMD9 | NPN/PNP Silicon Digital Transistor Array Preliminary data |
| SEMH11 | NPN Silicon Digital Transistor |
| SEMH13 | NPN Silicon Digital Transistor Array Preliminary data |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SEMB11 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB13 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
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