3
SED1278F/D
s ELECTRICAL CHARACTERISTICS
q DC Characteristics
r Write Cycle
VIH1
VIL1
VIH2
VIL2
VOH1
VOL1
VOH2
VOL2
RCOM
RSEG
IIL
—IP
IOP
fEXTCL
Duty
trEXTCL
tfEXTCL
fOSC
VLCD
Symbol
IOH = –0.205mA
IOL = 1.6mA
IOH = –0.04mA
IOL = 0.04mA
VCOM—Vn =0.5V
VSEG—Vn =0.5V
VI = 0 to VDD
VDD = 5V
Rf = 91K ±2%
Ceramic filter
VDD—V5
Condition
2.0
VSS
VDD—1.0
VSS
2.4
—
0.9VDD
—
50
—
125
45
—
190
245
3.0
Min.
DB0~DB7
RS, R/W, E
OSC1
DB0~DB7
VDD
COM1~16
SEG1~40
Applicable
Pin
—
2
2.5
—
125
250
50
—
270
250
—
0.5
Typ.
VDD
0.8
VDD
1.0
—
0.4
—
0.1VDD
10
1
250
350
55
0.2
350
255
VDD
0.8
Max.
V
k
k
A
mA
kHz
%
S
kHz
V
Unit
"H" level input voltage
(1)
"L" level input voltage
(1)
(2)
"L" level input voltage
(2)
"H" level output voltage (1)
"L" level output voltage (1)
"H" level output voltage (2)
"L" level output voltage (2)
Driver-on resistor (COM)
Driver-on resistor (SEG)
I/O leakage current
Pull-up MOS current
Supply current
External clock operation
External clock operating frequency
External clock duty
External clock rise time
External clock fall time
Internal clock operation (Rf oscillation)
Oscillation frequency
Internal clock operation (Ceramic filter oscillation)
Oscillation frequency
LCD driving voltage
Characteristic
Rf oscillation, from
external clock
VDD = 5V, fosc = fCP = 270kHz
(VDD = 5.0V±10%, VSS = 0V, Ta = –20 to 75°C)
XSCL
LP
DO
q AC Characteristics
r Read Cycle
tcycE
tWEH
trE, tfE
tAS
tAH
tRD
tDHR
Symbol
500
220
—
40
10
—
20
Min.
—
Typ.
—
25
—
120
—
Max.
ns
Unit
CL = 100pF
Condition
Enable cycle time
Enable "H" level pulse width
Enable rise/fall time
RS, R W setup time
RS, R W address hold time
Read data output delay
Read data hold time
Characteristic
(VDD = 5.0V±10%, VSS = 0V, Ta = –20 to 75°C)
tcycE
tWEH
trE, tfE
tAS
tAH
tDS
tDH
Symbol
500
220
—
40
10
60
10
Min.
—
Typ.
—
25
—
Max.
ns
Unit
Condition
Enable cycle time
Enable "H" level pulse width
Enable rise/fall time
RS, R/W setup time
RS, R/W address hold time
Data setup time
Write data hold time
Characteristic
(VDD=5.0V
±10%, V
SS=0V, Ta=–20 to 75°C)