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290
Parameter
Symbol
V
IH1
V
IL1
V
IH2
V
IL2
V
OH1
V
OL1
V
OH2
V
OL2
R
COM
R
SEG
I
IL
–I
P
I
op
Condition
Applicable Pin
DB0~DB7
RS, R/W, E
Min
2.0
V
SS
Typ
—
—
—
—
—
—
—
—
2
2.5
—
125
0.5
Max
V
DD
0.8
V
DD
1.0
—
0.4
—
0.1V
DD
10
10
1
250
0.8
Unit
V
V
V
V
V
V
V
V
k
k
μ
A
μ
A
mA
“H” level input voltage (1)
“L” level input voltage (1)
“H” level input voltage (2)
“L” level input voltage (2)
“H” level output voltage (1)
“L” level output voltage (1)
“H” level output voltage (2)
“L” level output voltage (2)
Driver-on resistor (COM)
Driver-on resistor (SEG)
I/O leakage current
Pull-up MOS current
Supply current
External clock operation
OSC1
V
DD
–1.0
V
SS
2.4
—
0.9V
DD
—
—
—
—
50
—
I
OH
=–0.205mA
I
OL
=1.6mA
I
OH
=–0.04mA
I
OL
=0.04mA
|V
COM
–V
n
|=0.5V
|V
SEG
–V
n
|=0.5V
V
I
=0 to V
DD
V
DD
=5V
Rf oscillation, from external clock
V
DD
=5V, f
OSC
=f
CP
=270kHz
DB0~DB7
COM1~16
SEG1~40
V
DD
External clock operating frequency
External clock duty
External clock rise time
External clock fall time
Internal clock operation (Rf oscillation)
Oscillation frequency
Internal clock operation (Ceramic filter oscillation)
Oscillation frequency
LCD driving voltage
f
EXTCL
Duty
tr
EXTCL
tf
EXTCL
125
45
—
—
250
50
—
—
350
55
0.2
0.2
kHz
%
μ
s
μ
s
f
OSC
R
f
=91k
±
2%
190
270
350
kHz
f
OSC
V
LCD
Ceramic filter
V
DD
–V5
245
3.0
250
—
255
V
DD
kHz
V
DC Characteristics
XSCL
LP
D0
(V
DD
= 5.0V
±
10%, V
SS
= 0V, T
a
= –20 to 75
°
C)
AC Characteristics
°
Read cycle
Parameter
Symbol
t
cycE
t
WEH
t
rE
, t
fE
t
AS
t
AH
t
RD
t
DHR
Conditions
Min
500
220
—
40
10
—
20
Typ
—
—
—
—
—
—
—
Max
—
—
25
—
—
120
—
Unit
ns
ns
ns
ns
ns
ns
ns
Enable cycle time
Enable “H” level pulse width
Enable rise/fall time
RS, R/W setup time
RS, R/W address hold time
Read data output delay
Read data hold time
C
L
=100pF
(V
DD
= 5.0V
±
10%, V
SS
= 0V, T
a
= –20 to 75
°
C)
SED1278