參數(shù)資料
型號(hào)： SE1470-002
元件分類(lèi)： 紅外LED
英文描述： 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 379K
代理商： SE1470-002
AlGaAs Infrared Emitting Diode
SE1470
DESCRIPTION
FEATURES
Compact metal can coaxial package
24 (nominal) beam angle
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55C to +125C)
Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
The SE1470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a glass
lensed metal can coaxial package. The package may
have a tab or second lead welded to the can as an
optional feature (SE1470-XXXL). Both leads are flexible
and may be formed as required to fit various mounting
configurations. These devices typically exhibit 70%
greater power intensity than gallium arsenide devices at
the same forward current.
INFRA-63.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
.106(2.69)
DIA
.076(1.93)
ANODE
MIN
.095(2.41) DIA
.020(0.51)
DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
CATHODE (CASE)
DIM_001a.ds4
SE1470-XXX
.106(2.69)
DIA
.076(1.93)
ANODE
CATHODE
TYPICAL MIN
.095(2.41) DIA
.020
(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
.020
(0.51) DIA
~
~~
DIM_001b.ds4
SE1470-XXXL
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
12
相關(guān)PDF資料
PDF描述
SE1470-003 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
SE2470-002 INFRARED LED
SE301A 4.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
SE308-T 1 ELEMENT, INFRARED LED, 940 nm
SE3470-003 3.77 mm, 1 ELEMENT, INFRARED LED, 880 nm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SE1470-002L 功能描述:紅外發(fā)射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
SE1470-003 功能描述:紅外發(fā)射源 1.8V 50mA 880nm Infrared Emittn Diod RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
SE1470-003L 功能描述:紅外發(fā)射源 AlGaAs Emiting Diode Mtl Can Coaxial Pkg RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
SE1470-003L 制造商:Honeywell Sensing and Control 功能描述:IR EMITTING DIODE
SE1470-004 功能描述:紅外發(fā)射源 GaAs Infrared Emitting Diode RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
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