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參數(shù)資料
| 型號： | SDT04S60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 散熱片 |
| 英文描述： | Heat Sink; Package/Case:TO-220; Thermal Resistance:12.4 C/W; Mounting Type:Through Hole; Length:36.83mm; Height:19.99mm; Width:25.55mm; Color:Black Anodized; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 中文描述： | 碳化硅肖特基二極管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 280K |
| 代理商： | SDT04S60 |
2004-02-11
Page 1
SDP04S60, SDD04S60
SDT04S60
Final data
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 800W
1)
No forward recovery
Product Summary
V
RRM
Q
c
I
F
600
V
13
nC
4
A
P-TO220-2-2.
P-TO252-3-1.
P-TO220-3-1.
Pin 1
n.c.
PIN 2
C
PIN 3
A
Type
SDP04S60
Package
P-TO220-3-1.
Ordering Code
Q67040-S4369
SDD04S60
P-TO252-3-1.
Q67040-S4368
SDT04S60
P-TO220-2-2.
Q67040-S4445
Marking
D04S60
D04S60
D04S60
n.c.
C
A
A
C
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
F
I
FRMS
I
FSM
Value
4
Unit
A
Continuous forward current,
T
C
=100°C
RMS forward current
,
f
=50
Hz
Surge non repetitive forward current, sine halfwave
5.6
T
C
=25°C,
t
p
=10ms
Repetitive peak forward current
12.5
T
j
=150°C,
T
C
=100°C,
D
=0.1
Non repetitive peak forward current
I
FRM
18
t
p
=10μs,
T
C
=25°C
i
2
t
value
,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
I
FMAX
40
∫
i
2
d
t
V
RRM
V
RSM
P
tot
T
j ,
T
stg
0.78
A2s
V
600
Surge peak reverse voltage
600
36.5
Power dissipation
,
T
C
=25°C
Operating and storage temperature
W
-55... +175
°C
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