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參數(shù)資料
| 型號(hào)： | SDR529SMS |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER |
| 中文描述： | 3 A, 900 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | SDR529SMS |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
Hyper Fast Recovery: 35 nsec maximum
PIV up to 900 Volts
Avalanche Breakdown
Hermetically Sealed
For High Efficiency High Voltage Applications
Single Chip Construction
Metallurgically Bonded
TX, TXV, and Space Level Screening Available
SDR526 thru SDR529
SDR526SMS thru SDR529SMS
3 AMPS
600 – 900 VOLTS
35 nsec
HYPER FAST
RECTIFIER
Axial
Surface Mount
Square Tab (SMS)
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
@ 50μA
SDR526
SDR527
SDR528
SDR529
V
RRM
V
RWM
V
R
600
700
800
900
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
=25
o
C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on I
O
, allow junction to
reach equilibrium between pulses, T
A
=25
o
C)
I
O
3
Amps
I
FSM
75
Amps
Operating and Storage Temperature
T
OP
& T
stg
-65 to +175
o
C
Maximum Thermal Resistance
Junction to Lead, L = 0.125” (Axial Lead)
Junction to End Tab (Surface Mount)
R
q
JL
R
q
JE
20
10
o
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0049D
DOC
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