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參數(shù)資料
| 型號(hào)： | SDR3NHFSMSS |
| 廠(chǎng)商： | SOLID STATE DEVICES INC |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 3 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | SDR3NHFSMSS |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SDR3
___ HF
___ ___
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└
Package Type
___ = Axial
SMS = Surface Mount Square Tab
│
└
Family/Voltage
K = 800 V
M = 1000 V
N = 1200 V
SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
3 AMP
800 - 1200 V
35 nsec
Hyper Fast Rectifier
Features:
Hyper Fast Recovery: 35 nsec maximum
PIV to 1200 Volts
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Single Chip Construction
Low Reverse Leakage
TX, TXV, S Level screening Available2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
SDR3KHF
SDR3MHF
SDR3NHF
VRRM
VRSM
VR
800
1000
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, TL = 25 °C)
Io
3.0
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TL = 25 °C)
IFSM
70
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +175
C
Maximum Thermal Resistance
Junction to Leads, L = 1/4"
Junction to Tabs
RθJE
16
12
C/W
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Axial Lead Diode
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097B
DOC
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