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參數(shù)資料
| 型號(hào)： | SDR2060UFBTTX |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-1 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 86K |
| 代理商： | SDR2060UFBTTX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SDR20 __ __ __ __
└ Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package Type
BT = Button
│
└ Reverse Recovery
UF = Ultra Fast
│
└ Voltage
60 = 600 V
SDR2060UFBT
20 AMP
Ultra Fast Rectifier
600 Volt
60 nsec
Features:
Replaces DO-4 and DO-5
Ultra Fast Recovery
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction
3/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Higher Voltages Available - Contact Factory
Replacement for MSARS20E060G
TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRRM
VRWM
VR
600
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz Sine Wave, BT Tc
≤100°C )
IO
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
Pulses, TA=25
oC)
IFSM
100
Amps
Operating and Storage Temperature
Top & Tstg
-65 to +175
oC
Maximum Thermal Resistance
Junction to Case
RθJC
2.0
oC/W
Notes:
1/ For ordering information, price, operating curves, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
Button (BT)
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