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參數(shù)資料
| 型號(hào)： | SDR1DSMMS |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | SDR1DSMMS |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR1
__ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package Type
SM = Surface Mount Round Tab
SMM = Surface Mount Mini
SMS = Surface Mount Square Tab
│
└ Voltage A = 50 V
J = 600 V
B = 100 V
K = 800 V
D = 200 V
M = 1000 V
G = 400 V
SDR1ASM, SMM, & SMS
thru
SDR1MSM, SMM, & SMS
1.0 AMPS
50 ─ 1000 VOLTS
50 – 70 nsec ULTRA FAST RECTIFIER
FEATURES:
Ultra Fast Recovery: 50-70 ns Max @ 25
°C 4/
80-120 ns Max @ 100
°C 4/
Single Chip Construction
PIV to 1000 Volts (1200V Version available
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Round, Mini, and Square Tab
Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available2/
Hyper Fast Version available
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
And
DC Blocking Voltage
SDR1A ..
SDR1B ..
SDR1D ..
SDR1G ..
SDR1J ..
SDR1K ..
SDR1M ..
VRRM
VRWM
VR
50
100
200
400
600
800
1000
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
IO
1
Amp
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
IFSM
25
Amps
Operating & Storage Temperature
TOP and TSTG
-65 to +175
°
C
Thermal Resistance, Junction to End Tab
SM
SMM
SMS
RθJE
28
45
35
°
C/W
SM (Round
Tab)
SMM (Mini)
SMS (Square Tab)
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003E
DOC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SDR1GSMMTX | 1 A, 400 V, SILICON, SIGNAL DIODE |
| SDR1JSMMTX | 1 A, 600 V, SILICON, SIGNAL DIODE |
| SDR1MSMMS | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| SDR1BSMMTX | 1 A, 100 V, SILICON, SIGNAL DIODE |
| SDR1KSMMTXV | 1 A, 800 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDR1DSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER |
| SDR1G | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:ULTRA FAST RECTIFIER |
| SDR1GHF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier |
| SDR1GHFS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier |
| SDR1GHFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier |
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