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參數(shù)資料
| 型號： | SDP8405-001 |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 503K |
| 代理商： | SDP8405-001 |
Silicon Phototransistor
SDP8405
DESCRIPTION
FEATURES
T-1 plastic package
20 (nominal) acceptance angle
Consistent optical properties
Wide sensitivity ranges
Mechanically and spectrally matched to
SEP8505 and SEP8705 infrared emitting diodes
The SDP8405 is an NPN silicon phototransistor transfer
molded in a T-1 clear plastic package. Transfer molding
of this device assures superior optical centerline
performance compared to other molding processes.
Lead lengths are staggered to provide a simple method
of polarity identification.
(.51)
.020 SQ.LEADTYP
.050
(1.27)
DIA.
(3.94)
.155
EMITTER
COLLECTOR
DIA.
.125 (3.18)
.115 (2.92)
MIN.
(12.7)
.500
.03 (.76)
.180(4.57)
.200(5.08)
MAX.
(6.35)
.250
.05(1.27)
DIM_100.ds4
INFRA-22.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SDP8405-013 | PHOTO TRANSISTOR DETECTOR |
| SDP8407-001 | PHOTO TRANSISTOR DETECTOR |
| SDP8436-002 | PHOTO TRANSISTOR DETECTOR |
| SDP8611-003 | LOGIC OUTPUT PHOTO DETECTOR |
| SDP8600-003 | LOGIC OUTPUT PHOTO DETECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDP8405-002 | 功能描述:光電晶體管 Silicon PhotoTrans T-1 Plastic Package RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| SDP8405-003 | 功能描述:光電晶體管 PHOTOTRANSISTOR T1 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| SDP8405-011 | 功能描述:光電晶體管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| SDP8405-012 | 功能描述:光電晶體管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| SDP8405-013 | 功能描述:光電晶體管 0.37 mW/cm2 maximum OPEN COLLECTOR 50deg RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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