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參數(shù)資料
| 型號： | SDC04 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Darlington Transistors With Built-in Avalanche Diode(NPN達林頓晶體管(內(nèi)置雪崩二極管）) |
| 中文描述： | 1.5 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | SD, SMD-16 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 21K |
| 代理商： | SDC04 |
163
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
h
FE
-I
C
Characteristics (Typical)
h
FE
-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
B
Characteristics (Typical)
I
C
-V
BE
Temperature Characteristics (Typical)
θ
j-a
-PW Characteristics
P
T
-T
a
Characteristics
Safe Operating Area (SOA)
SDC04
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
CBO
100
±
15
100
±
15
V
V
CEO
V
V
EBO
6
V
I
C
1.5
A
I
CP
2.5 (PW
≤
1ms, D
u
≤
10%)
A
I
B
0.1
A
P
T
3 (T
a
=25
°
C)
150
W
T
j
°
C
°
C
T
stg
–40 to +150
θ
j–a
41.6
°
C/W
(T
a
=25
°
C)
Symbol
Unit
Conditions
I
CBO
10
μ
A
mA
V
CB
=85V
I
EBO
1
3
V
EB
=6V
V
CEO
85
100
115
V
I
C
=10mA
h
FE
2000
5000
12000
V
CE
=4V, I
C
=1A
V
CE
(sat)
1.0
1.3
V
V
BE
(sat)
1.7
2.2
V
V
FEC
1.2
1.8
V
I
FEC
=1A
t
on
0.6
μ
s
μ
s
μ
s
MHz
V
CC
30V,
t
stg
3.0
I
C
=1A,
t
f
1.0
I
B1
=–I
B2
=2mA
f
T
30
V
CE
=12V, I
E
=–0.1A
C
ob
20
pF
V
CB
=10V, f=1MHz
I
C
=1A, I
B
=2mA
Specification
typ
min
max
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
I
C
V
CE
(V)
I
B
=5mA
1mA
0.5mA
0.3mA
0.2mA
20000
10000
5000
1000
500
100
50
0.03
0.05
0.1
0.5
1
2.5
(V
CE
=4V)
typ
h
F
I
C
(A)
20000
10000
5000
1000
500
100
50
0.03
0.05
0.1
0.5
1
2.5
h
F
I
C
(A)
(V
CE
=4V)
T
a
=125
°
C
75
°
C
25
°
C
–30
°
C
2
1
0
0.3
0.5
1
2.5
V
C
I
C
(A)
(I
C
/ I
B
=1000)
T
a
=125
°
C
75
°
C
25
°
C
–30
°
C
3
2
1
0
0.1
0.5
1
5
10
50
100
V
C
I
B
(mA)
I
C
=4A
I
C
=2A
I
C
-1A
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
V
BE
(V)
(V
CE
=4V)
I
C
T
a
=5
°
C
7
°
C
2
°
C
–
°
C
50
10
5
1
1
5
10
50
100
500 1000
θ
°
C
PW (mS)
3
2
1
0
0
4
3
2
1
50
100
150
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
P
T
Ta (
°
C)
5
1
0.5
0.1
0.05
0.03
3
5
10
50
100
I
C
V
CE
(V)
Single Pulse
Without Heatsink
T
a
=25
°
C
100
μ
s
1ms
10ms
2
R
1
R
2
15,16
1
4
13,14
3
6
11,12
5
8
9,10
7
R
1
: 4k
typ R
2
: 150
typ
NPN Darlington
With built-in avalanche diode
External dimensions
E
SD
Absolute maximum ratings
Electrical characteristics
I
Equivalent circuit diagram
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