參數(shù)資料
型號： SDA03H0SBD
廠商： ITT Corporation
英文描述： Low Profile DIP Switches
中文描述： 超薄DIP開關(guān)
文件頁數(shù)： 3/9頁
文件大小： 192K
代理商： SDA03H0SBD
2001 Fairchild Semiconductor Corporation
FSPJ264R, FSPJ264F Rev. A2
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
6.8
MAX
1.2
590
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 43A
I
SD
= 43A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 43A
V
GS
= 12V, I
D
= 27A
MIN
100K RAD
250
2.0
-
-
-
-
MAX
MIN
300K RAD
250
1.5
-
-
-
-
MAX
UNITS
V
V
nA
μ
A
V
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
-
4.5
100
25
2.15
0.047
4.5
100
50
2.62
0.056
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 7)
MAXIMUM
V
DS
BIAS (V)
250
200
200
150
150
100
TYPICAL RANGE (
μ
)
36
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
200
240
-4
-8
-12
-16
V
GS
(V)
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
280
V
D
LET = 82 GOLD
LET = 60 IODINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
280
LET = 37 BROMINE
FSPJ264R, FSPJ264F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SDA03H0SBDR 制造商:C&K Components 功能描述:- Trays
SDA03H0SBR 功能描述:DIP 開關(guān)/ SIP 開關(guān) SW DIP SPST 3POS FLUSH SLIDE 0.1A RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole
SDA03H0SK 功能描述:DIP 開關(guān)/ SIP 開關(guān) FLUSH ACT 3 POS RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole
SDA03H0SKD 功能描述:DIP 開關(guān)/ SIP 開關(guān) FLUSH ACT 3 POS RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole
SDA03H0SKR 制造商:C&K Components 功能描述:DIP, 3 POS, FLUSH ACTUATOR LOW PROFILE, SPST, GOLD - Tape and Reel 制造商:C&K Components 功能描述:Switch DIP OFF ON SPST 3 Recessed Slide 0.1A 50VDC Gull Wing 1000Cycle 2.54mm SMD T/R
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