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參數(shù)資料
| 型號(hào)： | SD8250 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors Avionics Applications(用于航空電子的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | SD8250 |
July 19, 1994
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRIVE
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
250 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPAC
Hermetic
Metal/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
BRANDING
STAN250A
ORDER CODE
SD8250
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
90
°
C)
Value
575
Unit
W
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
20
55
250
A
V
°
C
°
C
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance
(1)
0.28
°
C/W
*Applies only to rated RFamplifier operation
(1) Infra-RedScan ofHot Spot Junction Temperature at Rated RF Operating Conditions
SD8250
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/5
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