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參數(shù)資料
| 型號(hào)： | SD303C25S20 |
| 廠商： | International Rectifier |
| 英文描述： | FAST RECOVERY DIODES Hockey Puk Version |
| 中文描述： | 快速恢復(fù)二極管曲棍球北辰版本 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 487K |
| 代理商： | SD303C25S20 |
SD303C..C Series
12
D-656
Code
(
μ
s)
(A)
(A/
μ
s)
(V)
(
μ
s)
(
μ
C)
(A)
Test conditions
Max. values @ T
J
= 125
°C
Recovery Characteristics
typical t
rr
@ 25% I
RRM
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
Square Pulse
@ 25% I
RRM
T
J
= 25
o
C
S10
S15
S20
1.0
2.4
52
33
1.5
750
25
-30
2.9
90
44
2.0
3.2
107
46
Voltage
Code
V
RRM
max. repetitive
peak and off-state voltage
V
400
V
RSM
, maximum non-
repetitive peak voltage
V
500
I
RRM
max.
T
J
= 125°C
mA
Type number
04
SD303C..S10C
08
800
900
10
1000
1100
12
1200
1300
SD303C..S15C
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD303C..S20C
Parameter
SD303C..C
Units
Conditions
I
F(AV)
Max. average forward current
350(175)
A
180° conduction, half sine wave.
@ Heatsink temperature
55(75)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS current
I
FSM
non-repetitive forward current
550
A
@ 25°C heatsink temperature double side cooled
Max. peak, one-cycle
5770
t = 10ms
No voltage
6040
t = 8.3ms
reapplied
4850
t = 10ms
100% V
RRM
reapplied
5080
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
166
t = 10ms
No voltage
Initial T
J
= T
J
max.
152
t = 8.3ms
reapplied
117
t = 10ms
100% V
RRM
reapplied
107
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
1660
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
V
F(TO)
2
High level of threshold voltage
r
f1
r
f2
V
FM
1.14
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 1100A, T
J
= 25°C, t
p
= 10ms sinusoidal wave
1.63
Low level of forward slope resistance
1.14
High level of forward slope resistance
0.77
Max. forward voltage
2.26
V
Forward Conduction
KA
2
s
A
m
V
35
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