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參數(shù)資料
| 型號： | SD241P-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 86K |
| 代理商： | SD241P-E3/45 |
SD241P
Vishay General Semiconductor
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88738
Revision: 07-May-08
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SD241P
UNIT
Maximum thermal resistance from junction of case per diode
R
θ
JC
1.4
°C
ORDERING INFORMATION
(Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
SD241P-E3/45
6.13
45
30/tube
Tube
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
100
150
0
6
12
24
30
36
Resisti
v
e or Ind
u
cti
v
e Load
A
v
e
w
a
u
r
Case Temperat
u
re (°C)
1
10
100
100
200
300
400
Nu
m
b
er of Cycles at 60 Hz
P
w
a
u
r
u
r
T
= T
Max.
8
.3 ms Single Half Sine-
W
a
v
e
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.
8
0.9 1.0 1.1 1.2
Instantaneo
u
s For
w
ard
V
oltage (
V
)
0.01
0.1
1
10
100
T
J
= 150 °C
T
J
= 25 °C
P
u
lse
W
idth = 300
μ
s
1
%
D
u
ty Cycle
I
u
s
w
a
u
r
0
20
40
60
8
0
100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Re
v
erse
V
oltage (
%
)
I
u
s
v
e
u
r
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