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參數(shù)資料
| 型號： | SD172-13-23-222 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 57K |
| 代理商： | SD172-13-23-222 |
UV Enhanced PIN Photodiodes
Specifications
Responsivity:
0.10 A/W minimum, 0.18 A/W typical @ 365nm
Series Resistance:
100
maximum (measured by applying +10mA to photodiode and measuring voltage across anode and cathode)
Part Number
Active Area
Storage &
Operating Temp.
Shunt Resistance
Dark Current1
@ 5V
Breakdown
Voltage2
@ 10
A
Capacitance3
(typ)
NEP4
Max. Linear
Current5
Response
Time6
@ 5V
.
in.
(mm)
(C
° )
(min)
(M-Ohm)
(typ)
(nA)
(max)
(nA)
(typ)
(V)
at 0V
(pF)
at 5V
(pF)
(typ)
(W/
√ Hz)
(typ)
(mA)
(typ)
(nsec)
SD 172-13-23-222
0.185 x 0.125
(4.7 x 3.8)
-40 to 110
105
4.4
19
10
255
75
7.2x10-14
1.5
30
SD 200-13-23-242
0.200 (dia.)
(5.08 dia.)
-40 to 110
77
6.0
30
10
345
102
8.9x10-14
2.03
45
SD 290-13-23-242
0.300 x 0.220
(7.62 x 5.58)
-40 to 110
36
12.5
50
10
723
215
1.3x10-13
4.86
70
SD 445-13-23-305
0.394 x 0.394
(10 x 10)
-20 to 75
15
30.0
120
10
1700
500
1.9x10-13
10.0
200
1.
Dark Current and Shunt Resistance vary with temperature as follows: for T>23° C, ID=1.09 TID23, RSH=0.9 TRSH23 and for T<23° C,
ID=ID23/1.09 T, RSH=RSH23/0.9 T, where T is the temperature difference from 23° C, and ID23 and RSH23 are the dark current and shunt
resistance at 23° C.
2.
Typical values listed. Minimum value shall be 50% of typical.
3.
Typical values are listed in the table. Maximum value is 20% higher than the typical value.
4.
Test conditions are VB=10mV and 365nm.
5.
Maximum linear current specifies the level above which the output current deviates more than 10%. Short circuit current saturates at
approximately 10 times this level.
6.
Response times listed are for the rising or falling edge, and were measured at 830nm with a 50W load. Shorter wavelengths will result
in faster rise and fall times
UV Enhanced
file:///D|/WEB SITES/API/TMPlhtd1gkwnn.htm (1 of 2) [7/16/2001 11:28:40 AM]
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| SD172-14-21-021 | 功能描述:PHOTODIODE RED HP TO-5 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測器 - 光電二極管 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 波長:850nm 顏色 - 增強(qiáng)型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標(biāo)準(zhǔn)）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
| SD1726 | 功能描述:射頻雙極電源晶體管 NPN 50V 30MHz RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| SD1726/THA15 | 制造商:STMicroelectronics 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| SD1726_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| SD1727 | 功能描述:射頻雙極電源晶體管 NPN 50V 30MHz RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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