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參數(shù)資料
| 型號： | SD1169 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 31K |
| 代理商： | SD1169 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 100mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
UNITS
V
BV
CEO
I
C
= 50mA
36
V
BV
EBO
I
E
= 10mA
4.0
V
I
CBO
V
CB
= 15 V
5
mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
5
---
C
OB
V
CB
= 12.5 V
f = 1.0 MHz
200
pF
G
PE
h
C
V
CE
= 12.5 V P
OUT
= 40 W f = 88 MHz
6.0
7.5
65
dB
%
NPN SILICON RF POWER TRANSISTOR
SD1169
DESCRIPTION:
The
ASI SD1169
is a Common
Emitter Device Designed for Class C
Amplifier Applications in HF Land
Mobile Radios.
FEATURES INCLUDE:
Aluminum Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
6 A
V
CB
36 V
P
DISS
80 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.2
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .500 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
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