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參數(shù)資料
| 型號(hào)： | SD1070 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RES .016 OHM 1W 1% 1206 SMD |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | M137, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 63K |
| 代理商： | SD1070 |
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright
2000
MSC
1642
.PDF 2000-12-20
W
M
.
C
SD1070
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
RF PRODUCTS DIVISION
D E S C R I P T I O N
This silicon epitaxial NPN planar high frequency transistor employs a
multi emitter electrode design. This feature together with a heavily diffused
base matrix located between the individual emitters results in high RF
current handling capability, high power gain, low base resistance and low
output capacitance. These transistors are intended for Class A, B, or C
amplifier, oscillator or frequency multiplier circuits and are specifically
designed for operation in the VHF-UHF region.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
!
130 - 400 MHz
!
28 Volts
!
High Power Gain
!
High Efficiency
!
Common Emitter
!
P
OUT
= 13.5 W Min. @
175 MHz
APPLICAT IONS /BE NEFIT S
!
VHF - UHF Applications
ABS OLUT E MAX IMUM RAT INGS
(T
CASE
= 25
°
C)
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CES
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Device Current
P
DISS
Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Value
65
40
4.0
3.0
23.0
+200
-65 to +150
Unit
V
V
V
A
W
°
C
°
C
T HERMAL DAT A
R
TH(j-c)
Junction-Case Thermal Resistance
7.6
°
C/W
S
D
1
0
7
0
1
2
3
3. Collector
1. Emitter
2. Base
PIN CONNECTION
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