參數(shù)資料
型號: SD103CW-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 20 V, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù): 2/6頁
文件大?。?/td> 196K
代理商: SD103CW-GS18
www.vishay.com
2
Document Number 85681
Rev. 1.3,15-Mar-05
SD103AW / 103BW / 103CW
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
3001)
°C/W
Junction temperature
Tj
1251)
°C
Storage temperature range
TS
- 55 to + 1501)
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Leakage current
VR = 30 V
SD103AW
IR
5
A
VR = 20 V
SD103BW
IR
5
A
VR = 10 V
SD103CW
IR
5
A
Forward voltage drop
IF = 20 mA
VF
0.37
V
IF = 200 mA
VF
0.6
V
Diode capacitance
VR = 0 V, f = 1 MHz
Ctot
50
pF
Reverse recovery time
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
18488
0.01
1000
100
0.1
1
10
0
0.4
0.6
0.8
1.0
0.2
I
-
Forward
Current
(
m
A
)
F
VF - Forward Voltage(V)
Figure 2. Typical High Current Forward Conduction Curve
18489
4
5
3
2
0
1
0.5
1.0
0
1.5
I
-
Forward
Current
(
A
)
F
VF - Forward Voltage(V)
duty cycle=2%
tp = 300 ms
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