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參數(shù)資料
| 型號： | SD090SC150C |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER DIE Low Forward Voltage Drop (200 ∩ TJ Operation) |
| 中文描述： | 7.5 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 162K |
| 代理商： | SD090SC150C |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD090SC150A/B/C
Technical Data
Data Sheet 4963, Rev.-
SILICON SCHOTTKY RECTIFIER DIE
Low Forward Voltage Drop (200
C T
J
Operation)
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
150
7.5
Units
V
A
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(1)
I
FSM
140
A
E
AS
T
J
= 25
C, I
AS
= 2.0 A,
L = 6.5 mH
I
AS
decay linearly to 0 in 1
m
s
limited by T
J
max V
A
=1.5V
R
13.0
mJ
I
AR
2.0
A
Max. Junction Temperature
Max. Storage Temperature
T
J
T
stg
-
-
-65 to +200
-65 to +200
C
C
Electrical Characteristics
(1)
:
Characteristics
Max. Forward Voltage Drop
Symbol
V
F1
V
F2
I
R1
Condition
Max.
0.84
0.68
0.25
Units
V
V
mA
@ 7.5A, Pulse, T
J
= 25
C
@ 7.5A, Pulse, T
J
= 125
C
@V
R
= 150V, Pulse,
T
J
= 25
C
@V
R
= 150V, Pulse,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
Max. Reverse Current
I
R2
4.0
mA
Max. Junction Capacitance
C
T
250
pF
(1) in SHD package
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