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參數(shù)資料
| 型號： | 28F016S3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 V FlashFile Memory(3V閃速存儲器) |
| 中文描述： | 3伏FlashFile內(nèi)存（3V的閃速存儲器） |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 28F016S3 |
28F004S3/28F008S3/28F016S3 SPECIFICATION UPDATE
8 of 14
February, 1999
297799-009
2.
Block Locking and Unlocking
PROBLEM:
For the 8- and 16-Mbit devices that are effected by this erratum, the block
unlocking security feature is currently nonfunctional. Attempts to unlock blocks, using
the clear block lock-bits command sequence, may cause subsequent program and/or
block erase failures. The failure is seen as a device protection error in the status
register.
IMPLICATION:
Block unlocking feature is disabled. This erratum effects the following
command, Clear Block Lock-Bits. Locking blocks using the Set Block Lock-bits
command (while RP# is equal to 12 volts) is still supported.
WORKAROUND:
To prevent accidental software block lock-bit clearing, Intel
permanently sets the master lock-bit during the test flow. This disables the ability to lock
and unlock blocks via software only with RP# = V
IH
. Block locking and unlocking
requires 12 V on the component’s RP# input when the master lock-bit is set. Don’t
execute the clear block lock-bits command sequence when 12 V is applied to RP#.
Instead, simply override the block locking mechanism by applying 12 V to RP# to
enable program/erase operations that target locked blocks.
If data security is of utmost importance, lower V
PP
voltage equal to or less than V
PPLK
during normal operations. With V
PP
equal to or less V
PPLK
, the device is protected
against all data manipulation operations.
STATUS:
This erratum has been fixed. Refer to the Summary Tables of Changesto
determine the affected stepping(s).
AFFECTED PRODUCTS:
8-Mbit A-1, -3, -6, and -8 steppings and 16-Mbit A-0 stepping
produced before work week 22 of 1997 (second digit on topside FPO marking specifies
the last digit in the year and the third and fourth indicate the work week) are affected by
this erratum.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F008S5 | 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲器) |
| 28F016S5 | 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲器) |
| 28F008SC | 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器) |
| 28F016SC | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器) |
| 28F008S | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016S5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F016SA | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| 28F016SA/DD28F032SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFORMATION |
| 28F016SA-070 | 制造商:undefined 功能描述: |
| 28F016SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
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