參數(shù)資料
型號: 28F016S3
廠商: Intel Corp.
英文描述: 3 V FlashFile Memory(3V閃速存儲器)
中文描述: 3伏FlashFile內(nèi)存(3V的閃速存儲器)
文件頁數(shù): 14/18頁
文件大?。?/td> 133K
代理商: 28F016S3
28F004S3/28F008S3/28F016S3 SPECIFICATION UPDATE
10 of 14
February, 1999
297799-009
WORKAROUND:
If it is determined that your system can produce this CE#-high
occurrence, here are solutions to help work around this erratum:.
1. Read more than four good reads for A-1 and A-3 stepping and only one read for
A-6 stepping during each assertion of CE#, as illustrated in the figure above.
2. Issue a Byte Write command and program FFh to any location before executing
a read operation. Programming FFh will not alter stored data, but it will give the
component sufficient time to prepare for the read operation.
STATUS:
This erratum has been fixed. Refer to the Summary Tables of Changesto
determine the affected stepping(s).
AFFECTED PRODUCTS:
Refer to the Summary Tables of Changesto determine the
affected products and stepping(s).
4.
CE# Glitch Sensitivity
PROBLEM:
A noisy CE# control signal may cause an invalid read. This erroneous read
only occurs after the device has received over one hundred consecutive short CE#
glitches (t
EHEL
< 65 ns) with CE#-high time (t
EHEL
) greater than 145 ns (see the figure
below, A Long Series of CE# Glitches May Induce an Invalid Read).
CE#
Hundreds of CE# glitches
OE#
A
0-19
DQ
0-7
t > 145 ns
t < 65 ns
Valid Address
Invalid data
A Long Series of CE# Glitches May Induce an Invalid Read
相關(guān)PDF資料
PDF描述
28F008S5 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲器)
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28F008SC 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器)
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