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參數(shù)資料
| 型號： | SCP-5115 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hermetic Half Bridge IGBT Module 600V, 800A |
| 中文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封裝： | HERMETIC SEALED PACKAGE-11 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | SCP-5115 |
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
PART NUMBER: SCP-5115, REV. -
Hermetic Half Bridge -- IGBT Module
600V, 800A
Features:
Hermetic Core Construction
Increased Creepage and Clearance Distances for High Altitude operation
Built-in RTD for accurate Temperature sense
High Frequency Switching
Operation at Temperature Extremes
Internal Layout with Minimized Stray Inductances
Maximum Ratings
All ratings are at T
A
= 25
o
C unless otherwise specified.
Symbol
Test Conditions
V
ces
Vge = 0V
I
c
Tc = 25C / 70C
I
cpulse
Tj = 25C / 125C, 10kHz, D=.05
V
GE
Hipot
1500Vrms, 50Hz / 60Hz, 1 min.
T
j
Diode
I
F
Tc = 25C / 70C
I
FM
Tj = 25C / 125C, 10kHz, D=.05
Electrical Characteristics
All ratings are at T
A
= 25
o
C unless otherwise specified.
Symbol
Test Conditions
V
CE(sat)
Vge = 15V, pulsed
ton = 100us, f = 10Hz
Ic = 450A Tc = 25C
V
GE(th)
Ic = 4mA, Vge = Vce
I
CES
Vce = 600V, Vge = 0V
I
GES
Vce = 0V, Vge = 20V
Vce = 0V, Vge = 20V, Tc=125C
Ets
Total Switching Energy
Vge = 15V
Vcc = 300V, Ic = 450A,
C
iss
C
oss
C
rss
f = 1MHz
t
d(on)
t
r
t
d(off)
t
f
Rg = 1.0 Ohm
Diode
V
F
I
F
= 450A
t
RR
I
F
= 450A; V
R
=300V,
di/dt=1000A/usec
Value
600
800 / 500
1400 / 800
+ / - 20
-55 to 150
800 / 500
1400 / 800
Units
V
A
A
V
°
C
A
A
Min.
Typ.
Max.
Units
-
1.9
-
-
-
2.3
6.0
3.0
600
20
-
V
V
mA
nA
mA
mJ
4.5
-
-
-
30
-
-
-
-
-
-
-
-
-
42
8.2
7
120
100
375
150
1.4
-
-
-
-
nF
nF
nF
ns
ns
ns
ns
V
ns
Vce = 25V
Vge = 0V
180
220
750
320
1.7
150
Vce = 300V
Ic = 450A
Vge = + / - 15V
SCP-5115
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