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參數(shù)資料
| 型號： | SC338AIMSTRT |
| 廠商： | Semtech |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 236K |
| 描述： | IC REG CTRLR DUAL POS ADJ 10MSOP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類型： | 正，可調(diào)式 |
| 輸出數(shù)： | 2 |
| 輸出電壓： | 0.5 V ~ 1.8 V，0.5 V ~ 3.3 V |
| 電流 - 電源： | 500µA |
| 輸入電壓： | 5V，12V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 10-TFSOP，10-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 10-MSOP |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 產(chǎn)品目錄頁面： | 1359 (CN2011-ZH PDF) |
| 其它名稱： | SC338AIMSDKR |
7
?2004 Semtech Corp.
www.semtech.com
SC338(A)
POWER MANAGEMENT
Applications Infomation (Cont.)
SC338(A) Supply Comes Up Before MOSFET Drain Supply
MOSFET Drain Supply Comes Up Before SC338(A) Supply
Figure 1: Power Supply Sequencing
supplied to the MOSFET drain should be greater than
the output undervoltage threshold when that
output is enabled. This assumes that the drop through
the pass MOSFET is negligible. If not, then this drop needs
to be taken into account also since:
V
OUT
= V
DRAIN
- (I
OUT
x R
DS(ON)
).
If the supply to the SC338(A) IN pin comes up before the
supply to the MOSFET drain, then that output should be
enabled as the supply to the MOSFET drain is applied
- the Power Good signal for this rail would be ideal. If the
power supply to the MOSFET drain comes up before the
power supply to the SC338(A) IN pin, then the output
can either be enabled with the supply to the IN pin or
afterwards. Please see the example below.
Example: SC338(A) powered from 5V, output 1 powered
from 1.8V set for 1.5V out, output 2 not shown for
simplicity. Worst case undervoltage threshold is 60% (over
temperature) of 1.5V, or 0.9V. The typical enable
threshold is ~1V. See Figure 1 below.
Component Selection
Output Capacitors: low ESR capacitors such as Sanyo
POSCAPs or Panasonic SP-caps are recommended for
bulk capacitance, with ceramic bypass capacitors for
decoupling high frequency transients.
Input Capacitors: placement of low ESR capacitors such
as Sanyo POSCAPs or Panasonic SP-caps at the input to
the MOSFET (V
DRAIN
) will help to hold up the power supply
during fast load changes, thus improving overall transient
response. If V
DRAIN
is located at the bulk capacitors for
the upstream voltage regulator, additional capacitance
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