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參數(shù)資料
| 型號(hào)： | SC1112EVB |
| 廠商： | Semtech Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection |
| 中文描述： | 無電容，NMOS管，150mA的低壓差穩(wěn)壓器的反向電流保護(hù) |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 338K |
| 代理商： | SC1112EVB |
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6,.
Unless specified: 5VSTBY=4.75V to 5.25V; VTTIN=3.3V; T
A
= 25
°
C
Notes:
(1) All electrical characteristics are for the application circuit on page 19.
(2) Guaranteed by design
(3) Tracking Difference is defined as the delta between 3.3V Vin and the VTT, AGP, ADJ output voltages during the linear ramp up until
regulation is achieved. The Tracking Voltage difference might vary depending on MOSFETs Rdson, and Load Conditions.
(4) During power up, an internal short circuit glitch timer will start once the VTT Input Voltage exceeds the VTTIN
(1.5V). During the glitch
timer immunity time, determined by the Delay capacitor (Delay time is approximately equal to (Cdelay*SCTH)/ISC), the short circuit
protection is disabled to allow VTT output to rise above the trip threshold (0.7V). If the VTT output has not risen above the trip
threshold after the immunity time has elapsed, the VTT output is latched off and will only be enabled again if either the VTT input
voltage or the 5VSTBY is cycled.
(5) PWRGD pin is kept low during the power up, until the VTT output has reached its PG
or PG
level. At that time the PWRGD
source current I
(20uA) is enabled and will start charging the external PWRGD delay capacitor connected to the DELAY pin. Once the
capacitor is charged above the PG
Delay_TH
(1.5V), the PWRGD pin is released from ground.
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| SC1112S.TR | 制造商:Semtech Corporation 功能描述: |
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