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參數(shù)資料
| 型號： | SBYV26CHE3/73 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 75K |
| 代理商： | SBYV26CHE3/73 |
Document Number: 88735
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Ultrafast Rectifier
SBYV26C
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ideal for printed circuit boards
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) Peak reverse energy measured with 8/20 μs surge
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
600 V
IFSM
30 A
trr
30 ns
VF
1.3 V
TJ max.
175 °C
DO-204AL (DO-41)
SUPERECTIFIER
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
600
V
Maximum RMS voltage
VRMS
420
V
Maximum DC blocking voltage
VDC
600
V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TL = 85 °C (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Non repetitive peak reverse energy
ERSM (1)
5.0
mJ
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SBYV26C-E3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-HE3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-E3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV27-100-E3/54 | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-200-E3/73 | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBYV26D | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
| SBYV26E | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
| SBYV26F | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
| SBYV26G | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
| SBYV27-100 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Soft Recovery Ultrafast Plastic Rectifier |
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