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參數(shù)資料
| 型號(hào)： | SBT2907F |
| 廠商： | AUK Corp |
| 英文描述： | PNP Silicon Transistor (General purpose application Switching application) |
| 中文描述： | 進(jìn)步黨硅晶體管（通用應(yīng)用交換應(yīng)用） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 191K |
| 代理商： | SBT2907F |
KST-2081-001
2
SBT2907F
Absolute maximum ratings
Ta=25
°C
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-60
V
Collector-Emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-600
mA
Collector dissipation
PC*
350
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10
×8×0.6mm
Electrical Characteristics
Ta=25
°C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-10A, IE=0
-60
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-40
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-10A, IC=0
-5
-
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-
-20
nA
DC current gain
hFE
VCE=-10V, IC=-10mA
100
-
Collector-Emitter saturation voltage
VCE(sat)
IC=-150mA, IB=-15mA
-
-0.4
V
Transition frequency
fT
VCE=-5.0V, IC=-20mA,
f=100MHz
200
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
8
pF
Turn-on time
ton
-
45
ns
Delay time
td
-
10
ns
Rise time
tr
VCC=-30Vdc,IC=-150mAdc,
IB1=-15mAdc
-
40
ns
Turn-off time
toff
-
100
ns
Storage time
ts
-
80
ns
Fall time
tf
VCC=-6.0Vdc,IC=-150mAdc,
IB1=IB2=-15mAdc
-
30
ns
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|---|---|
| SBT2907F_1 | 制造商:AUK 制造商全稱:AUK corp 功能描述:PNP Silicon Transistor |
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