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參數(shù)資料
| 型號(hào)： | SBLB2040CT-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | SBLB2040CT-HE3/45 |
SBL(F,B)2030CT & SBL(F,B)2040CT
Vishay General Semiconductor
Document Number: 88730
Revision: 25-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
30 V, 40 V
IFSM
250 A
VF
0.60 V
TJ max.
150 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL20xxCT
ITO-220AB
SBLF20xxCT
SBLB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL2030CT
SBL2040CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Working peak reverse voltage
VRWM
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified current at TC = 105 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Peak repetitive reverse surge current per diode at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VAC
1500
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SBLB2030CTHE3/45 | 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB |
| SBL2080CT | 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBL2050CTP | 20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBL2040CTP | 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBL2020CT | 20 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBLB20L15/31 | 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 15V 20A 3-Pin(2+Tab) TO-263AB T/R |
| SBLB25100CT | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SBLB2530CT | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SBLB2535CT | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SBLB2545CT | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
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