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參數(shù)資料
| 型號： | SBL6060PT |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 60A SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 60 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, PLASTIC, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 63K |
| 代理商： | SBL6060PT |
D
S
30050 Rev. B-2
1 of 2
SBL6030PT - SBL6060PT
SBL6030PT - SBL6060PT
60A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
K
S
M
H
R
D
C
P*
*2 Places
Q
TO-3P
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
R
S
All Dimensions in mm
Max
3.20
3.50
4.59
5.16
20.80
21.30
19.70
20.20
2.10
2.40
0.51
0.76
15.90
16.40
1.70
2.70
3.10
3.30
3.50
4.51
5.20
5.70
1.12
1.22
1.93
2.18
2.97
3.22
11.70
12.80
4.30 Typical
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material : UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 5.6 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SBL
6030PT
SBL
6040PT
SBL
6050PT
SBL
6060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
V
R(RMS)
30
40
50
60
V
RMS Reverse Voltage
Average Rectified Output Current
21
28
35
42
V
@ T
C
= 100 C
(Note 1)
I
O
60
A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
I
FSM
500
A
@ I
F
= 30A, T
C
= 25 C
@ T
C
= 25 C
@ T
C
= 100 C
V
FM
0.55
0.70
V
I
RM
20
200
1500
0.5
mA
C
j
pF
K/W
C
R
Jc
T
j,
T
STG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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