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參數(shù)資料
| 型號： | SBL10L30-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 127K |
| 代理商： | SBL10L30-HE3/45 |
SBL10L30, SBLF10L30, SBLB10L30
Vishay General Semiconductor
Document Number: 88724
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Low VF Schottky Barrier Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Very low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier
of switching mode power supplies, OR-ing diode,
freewheeling diodes, dc-to-dc converters and polarity
protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
30 V
IFSM
200 A
VF
0.43 V
TJ max.
150 °C
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
SBL10L30
ITO-220AC
SBLF10L30
SBLB10L30
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
V
Working peak reverse voltage
VRWM
21
V
Maximum DC blocking voltage
VDC
30
V
Maximum average forward rectified current at TC = 140 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
VAC
1500
V
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| SBLB20L15-E3/45 | 20 A, 15 V, SILICON, RECTIFIER DIODE, TO-263AB |
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