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參數(shù)資料
| 型號(hào)： | SB550-E3/73 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | SB550-E3/73 |
Document Number: 88721
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB520 thru SB560
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
20 V to 60 V
IFSM
220 A
VF
0.48 V, 0.65 V
TJ max.
150 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB520
SB530
SB540
SB550
SB560
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
5.0
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
220
A
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB520
SB530
SB540
SB550
SB560
UNIT
Maximum instantaneous
forward voltage
5.0 A
VF (1)
0.48
0.65
V
Maximum instantaneous
reverse current at rated
DC blocking voltage
TA = 25 °C
IR (1)
0.5
mA
TA = 100 °C
50
25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB560-E3/54 | 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB560A-E3/73 | 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB5H100-HE3/73 | 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SS3H10-HE3/9AT | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SBL4040PT-E3/45 | 40 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SB550EA-G | 制造商:COMCHIP 制造商全稱(chēng):Comchip Technology 功能描述:ESD Leaded Schottky Barrier Rectifiers |
| SB550EB-G | 制造商:COMCHIP 制造商全稱(chēng):Comchip Technology 功能描述:ESD Leaded Schottky Barrier Rectifiers |
| SB550ET-G | 制造商:COMCHIP 制造商全稱(chēng):Comchip Technology 功能描述:ESD Leaded Schottky Barrier Rectifiers |
| SB550H | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| SB550S | 制造商:EIC 制造商全稱(chēng):EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
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