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參數(shù)資料
| 型號(hào)： | SB160T50A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | D4, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | SB160T50A |
SB120-SB1
100
SB120-SB1100, Rev. C
2001 Fairchild Semiconductor Corporation
SB120 - SB1100
Schottky Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
1.25
W
RθJA
Thermal Resistance, Junction to Ambient
80
°C/W
Features
1.0 ampere operation at T
A
= 75°C
with no thermal runaway.
For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
Symbol
Parameter
Device
Units
120
130
140
150
160
180
1100
VF
Forward Voltage @ 1.0 A
500
700
850
mV
I
R
Reverse Current @ rated V
R
T
A = 25°C
T
A = 100°C
0.5
10
mA
I
rr
Maximum Full Load Reverse Current, Full Cycle
T
A = 75°C
30
mA
C
T
Total Capacitance
V
R = 4.0 V, f = 1.0 MHz
110
pF
Symbol
Parameter
Value
Units
120
130
140
150
160
180
1100
V
RRM
Maximum Repetitive Reverse Voltage
20
30
40
50
60
80
100
V
I
F(AV)
Average Rectified Forward Current
.375 " lead length @ T
A = 75°C
1.0
A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30
A
T
stg
Storage Temperature Range
-65 to +125
°C
T
J
Operating Junction Temperature
-65 to +125
°C
Thermal Characteristics
DO-41
COLOR BAND DENOTES CATHODE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SB160TA | 制造商:World Products 功能描述: |
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| SB16-100AM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
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