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參數(shù)資料
| 型號(hào)： | SB120 |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | SB120 |
Number: DB-101
Nov. 2009 Release / B
Page 1
P rel i mi na ry D a ta Sh eet
SB120 THRU SB1100
1.0AMP.
Schottky Barrier Rectifier
VOLTAGE:20 TO 100V
CURRENT:1.0A
Specification Features:
Case: Epoxy, Molded
Weight: 0.4Gram (Approximately)
High current capability,Low Forward Voltage Drop
High surge current capability
Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are
Readily Solderable
Lead And Mounting Surface Temperature For Soldering Purposed:
260℃ Max. For 10 Seconds 1/16 Inch From Case
RoHS Compliant
Cathode Indicated By Polarity Band
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Parameter
Symbol
SB
120
SB
130
SB
140
SB
150
SB
160
SB
180
SB
1100
Units
Maximum Repetitive Peak
Reverse Voltage
VRRM
20
30
40
50
60
80
100
V
Maximum DC Blocking Voltage
VR
20
30
40
50
60
80
100
V
Maximum Average Forward
Rectifier Current.
(0.375” Lead Length @ TA=75℃)
IF(AV)
1.0
A
Non-repetitive Peak Forward
Surge Current.
(8.3mS Single Half Sine-wave)
IFSM
30
A
Operating Junction Temperature
TJ
100
150
°C
Storage Temperature Range
TSTG
-55 to +100
-55 to +150
°C
Thermal Resistance
(Junction to Ambient)
(Note 1)
RθJA
80
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Symbol
SB
120
SB
130
SB
140
SB
150
SB
160
SB
180
SB
1100
Units
Maximum D.C Reverse Current
At Rated D.C Blocking Voltage
@ TA=25℃
@ TA=100℃
IR
1.0
10.0
mA
Forward Voltage @1A
VF
0.500
0.700
0.850
V
Total Capacitance
@VR=4V, f=1MHz
CT
110
pF
NOTE:
(1) Thermal resistance from junction to ambient at 0.375” lead length, vertical P.C. board mounted
AXIAL LEAD
DO-41
S
B12
0
th
ro
u
g
h
S
B1
100
S
e
ri
e
s
DEVICE MARKING DIAGRAM
SB1XX : Device Name SB120~ SB1100
KEL
: KEL Logo
S
B
1
X
K
E
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB180 | 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 |
| SB1100 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| SB130 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB120 | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB220-BP | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-15 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SB120 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB120_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB120_05 | 制造商:EIC 制造商全稱(chēng):EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| SB120_06 | 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB120_07 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
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