- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372117 > SB051C020-1-W-AG Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. PDF資料下載
參數(shù)資料
| 型號(hào)： | SB051C020-1-W-AG |
| 英文描述： | Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. |
| 中文描述： | 肖特基勢壘二極管晶圓河51米爾斯，20伏，1安培，0.32VF。 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 162K |
| 代理商： | SB051C020-1-W-AG |
Data Sheet
Third Angle Protection
μm
420 +/- 20
Symbol
Cathode
Anode
Ti-Ni-Ag
Dimensions in mils (mm)
(2) The characteristics above assume the die are assembled in
industry standard packages using appropriate attach methods.
Mechanical Dimensions
Wafer
Die
SCD0976-1
Page 1 of 1
Transys Electronics LTD
Email:
sales@transyselectronics.com
Website:
www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed
to be accurate and may be changed without notice at anytime. Liability will not be
accepted by Transys Electronics LTD for any consequences whatsoever in its use. This
publication does not convey nor imply any license under patent or other
intellectual/industrial property rights. The products within this specification are not
designed for use in any
life support apparatus
whatsoever where malfunction can be
reasonably expected to cause personal injury or death. Customers using these products
in the aforementioned applications do so at their own risk and agree to fully indemnify
Transys Electronics LTD for any damage/ legal fees either direct, incidental or
consequential from this improper use or sale.
SB051C020-1-W-Ag
Schottky cr Barrier Diode Wafer
51 Mils, 20 Volt, 1 Amp, 0.32V
F.
20
V
RRM
Maximum Repetitive Reverse Voltage (2)
Electrical Characteristics @ 25
Reverse Leakage Current @ V
R
= 20V (2)
I
R(1)
C
Volt
800
SB051C020-1-W-Ag (See ordering code below)
I
F(AV)
1
Typical Average Forward Rectified Current (2)
μA
Maximum Forward Voltage @ I
F
= 1A (1)(2)
V
F
Volt
Amp
0.32
Symbol
Unit
Reverse Leakage Current @ V
R
= 20V, 125
O
C (2)
I
R(2)
mA
Storage Temperature Range (2)
T
J
-45 to +125
C
Junction Operating Temperature Range (2)
T
SG
-45 to +125
C
(1) Pulse Width tp = < 300μS, Duty Cycle <2%
Cr-Al-Ni-Ag - Suffix "Ag"
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag")
Bottom (cathode) Ti/Ni/Ag
Scribe line Width
80 μM
51.18
(1.300)
40
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 o C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Schottky Barrier 65 Mils CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Ordering Code
SB065C040-3-W-Ag
ESD Machine Model (MM)
V
ESD(mm)
Volt
>1000
e.g.
43.7
(1.112)
51.18
(1.300)
43.7
(1.112)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB051C025-1-W-AG | Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF. |
| SB051P150-W-AG | Schottky Barrier Diode Wafer 51 Mils, 150 Volt, 2 Amp |
| SB051P200-W-AG | Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp |
| SB060C020-3-W-AG | Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. |
| SB063P150-W-AG | Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SB051C025-1-W-AG | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF. |
| SB051P150-W-AG | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 51 Mils, 150 Volt, 2 Amp |
| SB051P200-W-AG | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp |
| SB051P200-W-AG/AL | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp |
| SB05-2412D | 制造商:ASTRODYNE 制造商全稱:Astrodyne Corporation 功能描述:Isolated and Regulated 5 WATT Modular DC/DC Converters |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。