參數(shù)資料
型號： SAF-XC2786X-96F66L66
廠商： INFINEON TECHNOLOGIES AG
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, MICROCONTROLLER, PQFP144
封裝： 0.50 MM PITCH, GREEN, PLASTIC, LQFP-144
文件頁數(shù)： 111/119頁
文件大?。?/td> 1432K
代理商： SAF-XC2786X-96F66L66
XC2786X
XC2000 Family Derivatives
Electrical Parameters
Preliminary
Data Sheet
89
V2.0, 2008-03
4.5
Flash Memory Parameters
The data retention time of the XC2786X’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Access to the XC2786X Flash modules is controlled by the IMB. Built-in prefetch
mechanisms optimize the performance for sequential access.
Flash access waitstates only affect non-sequential access. Due to prefetch
mechanisms, the performance for sequential access (depending on the software
structure) is only partially influenced by waitstates.
Table 23
Flash Characteristics
(Operating Conditions apply)
Parameter
Symbol
Limit Values
Unit
Note / Test
Condition
Min.
Typ.
Max.
Programming time per
128-byte page
t
PR
–31)
1) Programming and erase times depend on the internal Flash clock source. The control state machine needs a
few system clock cycles. This requirement is only relevant for extremely low system frequencies.
In the XC2786X erased areas must be programmed completely (with actual code/data or dummy values)
before that area is read.
3.5
ms
Erase time per
sector/page
t
ER
5ms
ms
Data retention time
t
RET
20
–
years
1,000 erase /
program
cycles
Flash erase endurance for
user sectors2)
2) A maximum of 64 Flash sectors can be cycled 15,000 times. For all other sectors the limit is 1,000 cycles.
N
ER
15,000 –
–
cycles Data retention
time 5 years
Flash erase endurance for
security pages
N
SEC
10
–
cycles Data retention
time 20 years
Drain disturb limit
N
DD
64
–
cycles 3)
3) This parameter limits the number of subsequent programming operations within a physical sector. The drain
disturb limit is applicable if wordline erase is used repeatedly. For normal sector erase/program cycles this
limit will not be violated.
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