參數(shù)資料
型號: SAF-XC164LM-8F40F
廠商: INFINEON TECHNOLOGIES AG
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP64
封裝: 0.50 MM PITCH, GREEN, PLASTIC, TQFP-64
文件頁數(shù): 44/61頁
文件大小: 1790K
代理商: SAF-XC164LM-8F40F
XC164LM
Derivatives
Electrical Parameters
Data Sheet
47
V1.2, 2007-03
Table 13
Power Consumption XC164LM (Operating Conditions apply)
Parameter
Sym-
bol
Limit Values
Unit Test Condition
Min.
Max.
Power supply current (active)
with all peripherals active
I
DDI
–15 +
2.6
× f
CPU
mA
f
CPU in [MHz]
1)2),
-16F derivatives
1) During Flash programming or erase operations the supply current is increased by max. 5 mA.
2) The supply current is a function of the operating frequency. This dependency is illustrated in Figure 9.
These parameters are tested at
VDDImax and maximum CPU clock frequency with all outputs disconnected and
all inputs at
VIL or VIH.
10 +
2.6
× f
CPU
mA
f
CPU in [MHz]
-4F/8F derivatives
Pad supply current
I
DDP
–5
mA
3)
3) The pad supply voltage pins (
VDDP) mainly provides the current consumed by the pin output drivers. A small
amount of current is consumed even though no outputs are driven, because the drivers’ input stages are
switched and also the Flash module draws some power from the
VDDP supply.
Idle mode supply current with
all peripherals active
I
IDX
–15 +
1.2
× f
CPU
mA
f
CPU in [MHz]
-16F derivatives
–10 +
1.2
× f
CPU
mA
f
CPU in [MHz]
-4F/8F derivatives
Sleep and Power down mode
supply current caused by
leakage4)
4) The total supply current in Sleep and Power down mode is the sum of the temperature dependent leakage
current and the frequency dependent current for RTC and main oscillator.
I
PDL
5)
5) This parameter is determined mainly by the transistor leakage currents. This current heavily depends on the
junction temperature (see Figure 11). The junction temperature
TJ is the same as the ambient temperature TA
if no current flows through the port output drivers. Otherwise, the resulting temperature difference must be
taken into account.
84,000
× e
mA
V
DDI = VDDImax
6)
T
J in [°C]
α = 4380 / (273 + T
J)
-16F derivatives
6) All inputs (including pins configured as inputs) at 0 V to 0.1 V or at
VDDP - 0.1 V to VDDP, all outputs (including
pins configured as outputs) disconnected. This parameter is tested at 25
°C and is valid for T
J ≥ 25 °C.
128,000
× e
mA
α = 4670 / (273 + T
J)
-4F/8F derivatives
Sleep and Power down mode
supply current caused by
leakage and the RTC running,
clocked by the main oscillator4)
I
PDM
7)
7) This parameter is determined mainly by the current consumed by the oscillator switched to low gain mode (see
Figure 10). This current, however, is influenced by the external oscillator circuitry (crystal, capacitors). The
given values refer to a typical circuitry and may change in case of a not optimized external oscillator circuitry.
0.6 +
0.02
× f
OSC
+
I
PDL
mA
V
DDI = VDDImax
f
OSC in [MHz]
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