參數(shù)資料
型號(hào): SAA7346
廠商: NXP Semiconductors N.V.
英文描述: Shock absorbing RAM addresser
中文描述: 減震內(nèi)存發(fā)件人
文件頁(yè)數(shù): 11/24頁(yè)
文件大小: 113K
代理商: SAA7346
July 1994
11
Philips Semiconductors
Preliminary specification
Shock absorbing RAM addresser
SAA7346
Table 6
SAA7346 I
2
S output speeds.
Notes
1.
2.
CAV with n = 4 speed at outer edge of disc; n = 1.5 at inner edge of disc.
To build-up a delay, RCD2 should be made HIGH temporarily for twice the delay time.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
DD
= 3.3 to 5.5 V; V
SS
= 0 V; T
amb
=
40 to +85
°
C; unless otherwise specified.
RCD2
I
2
S INPUT
SPEED
CAV
(1)
n = 1
n = 2
n = 4
n = 2
n = 4
I
2
S OUTPUT
SPEED
APPLICATION
LOW
LOW
(2)
LOW
LOW
HIGH
HIGH
n = 1
n = 1
n = 1
n = 1
n =
1
2
n =
1
2
CAV CDROM player with standard audio speed
delay line feature
shock proof CD player
high data rate CDROM/CDI player with standard audio speed
musicians feature
musicians feature
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
P
max
T
stg
T
amb
supply voltage
maximum power dissipation
storage temperature
operating ambient temperature
0
55
40
6.5
500
+125
+85
V
mW
°
C
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
80
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
DD
I
DD
I
DDb
supply voltage
supply current
bypass supply current
3.3
5.0
12
4
5.5
V
mA
mA
V
DD
= 5.0 V
V
DD
= 5.0 V;
bypass mode
I
DDq
quiescent supply current
100
μ
A
Digital inputs
I
NPUTS
: WCI, SDI, CLKIN, OTD
AND
RCD2;
NORMAL
CMOS
V
IL
V
IH
I
LI
C
I
LOW level input voltage
HIGH level input voltage
input leakage current
input capacitance
0.3
0.7V
DD
10
0.3V
DD
V
DD
+ 0.3 V
+10
10
V
V
I
= 0 V to V
DD
μ
A
pF
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