參數(shù)資料
型號： SA58603D
廠商： NXP SEMICONDUCTORS
元件分類： 運動控制電子
英文描述： High precision operational amplifier, comparator, and voltage reference
中文描述： OP-AMP, 350 uV OFFSET-MAX, PDSO8
封裝： 3.90 MM, PLASTIC, MS-012, SOP-8
文件頁數(shù)： 5/15頁
文件大小： 133K
代理商： SA58603D
Philips Semiconductors
Product data
SA58603
High precision operational amplifier,
comparator, and voltage reference
2002 Nov 13
5
ELECTRICAL CHARACTERISTICS
V
CC
= 3.0 V, V
IN
= 0 V, and T
amb
= 25
°
C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CC
Supply current
–
0.1
0.15
mA
I
OVS
Reference voltage output current
0.3
–
–
mA
V
S
Reference voltage
1.22
1.27
1.32
V
V
S
Reference voltage temperature drift
–
±
100
–
ppm/
°
C
PSRR
Power supply rejection ratio
f = 100 Hz
50
60
–
dB
V
CC
Power supply voltage operating range
1.8
3.0
6.0
V
Amplifier section (note 1)
V
INA
Input voltage range
–0.2
–
0.3
V
V
IOA
Input offset voltage
–
±
0.1
±
0.35
mV
V
IO
/
T
Input offset voltage temperature drift
T
amb
= –20 to +75
°
C
–
±
1
±
3
μ
V/
°
C
I
IOA
Input offset current
–
1
10
nA
I
i(bias)A
Input bias current
–
50
150
nA
G
v(ol)A
Open-loop voltage gain
80
100
–
dB
I
OA
Output current
V
IN
= 10 mV; V
O
= 0.5 V
0.5
–
–
mA
V
OA
Output voltage swing
V
IN
= –5 to +25 mV; R
L
= 10 k
0.01
–
V
CC
– 1.0
V
Comparator section (note 2)
V
IOC
Input offset voltage
V
IN
= –5 mV
–
±
1.0
±
3.5
mV
V
IOC
/
T
Input offset voltage temperature drift
V
IN
= –5 mV
–
±
10
±
30
μ
V/
°
C
I
i(bias)C
Input bias current
V
IN
= –5 mV
–
25
75
nA
I
O(sink)
Output sink current
V
IN
= 10 mV; V
O
= 0.4 V
5
–
–
mA
I
LO
Output leakage current
V
O
= V
CC
+ 1 V
–
–
0.2
μ
A
V
SAT
NOTES:
1. Amplifier output is emitter follower with an on-chip 22 k
pull-down resistor.
2. Comparator output is open collector; it requires an external pull-up resistor. See application section on how to determine this resistor.
Output saturation voltage
V
IN
= 10 mV; I
O(sink)
= 5 mA
–
200
400
mV
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