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參數(shù)資料
| 型號： | SA5521N |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 位置變換器 |
| 英文描述： | LVDT signal conditioner |
| 中文描述： | SIGNAL CONDITIONER, PDIP18 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-18 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 69K |
| 代理商： | SA5521N |
Philips Semiconductors Linear Products
Product specification
NE/SA/SE5521
LVDT signal conditioner
August 31, 1994
903
DC ELECTRICAL CHARACTERISTICS
V+ = V
REF
= 10V, T
A
= 0 to 70
°
C for NE5521, T
A
= –55 to +125
°
C for SE5521, T
A
= –40 to 85
°
C for SA5521, Frequency = 1kHz, unless
otherwise noted.
SYMBOL
PARAMETER
TEST CONDITIONS
NE5521
Typ
12.9
5.3
SA/SE5521
Typ
12.9
5.3
UNIT
Min
Max
20
8
V+
280
Min
Max
18
8
V+
260
V
CC
I
REF
V
REF
P
D
Oscillator Section
Supply current
Reference current
Reference voltage range
Power dissipation
mA
mA
V
mW
5
5
182
182
Oscillator output
R
L
= 10k
V
REF
8.8
V
REF
8.8
1.5
0.4
0.005
±
0.9
0.05
3.3
170
V
RMS
THD
Sine wave distortion
Initial amplitude error
Tempco of amplitude
Init. accuracy of oscillator freq.
Temperature coeff. of frequency
1
Voltage coeff. of frequency
Min OSC (OSC) Load
2
Demodulator Section
∈
r
Linearity error
No load
T
A
= 25
°
C
1.5
0.4
0.005
±
0.9
0.05
2.5
170
%
%
±
3
0.01
±
5
±
3
0.01
±
5
%/
°
C
%
%/
°
C
T
A
= 25
°
C
%/V(V
REF
)
300
300
5V
P-P
input
±
0.05
V
REF
2
±
1.4
5
–234
±
0.1
±
0.1
±
0.05
V
REF
2
±
1.4
5
–234
±
0.1
±
0.1
%FS
Maximum demodulator input
V
P-P
V
OS
TCV
OS
I
BIAS
Demodulator offset voltage
Demodulator offset voltage drift
Demodulator input current
V
R/2
accuracy
Auxiliary Output Amplifier
V
OS
Input offset voltage
I
BIAS
Input bias current
I
OS
Input offset current
A
V
Gain
SR
Slew rate
GBW
Unity gain bandwidth product
Output voltage swing
Output short circuit current to
ground or to V
CC
NOTES:
1. This is temperature coefficient of frequency for the device only. It is assumed that C
T
and R
T
are fixed in value and C
T
leakage is fixed over
the operating temperature range.
2. Minimum load impedance for which distortion is guaranteed to be less than 5%.
±
5
25
±
5
25
mV
μ
V/
5
C
nA
%
–600
–500
±
1
±
1
±
0.5
–210
10
385
1.3
1.6
8.2
±
5
±
0.5
–210
10
385
1.3
1.6
8.2
±
5
mV
nA
nA
V/mV
V/
μ
s
MHz
V
–600
–500
50
50
100
100
A
V
= 1
R
L
= 10k
7
7
T
A
= 25
°
C
42
100
42
100
mA
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