TEST CIRCUITS
參數資料
型號: SA5212AD/01,112
廠商: NXP Semiconductors
文件頁數: 18/20頁
文件大?。?/td> 0K
描述: IC TRANSIMP AMP 140MHZ 8-SOIC
標準包裝: 2,000
放大器類型: 轉阻
電路數: 1
輸出類型: 差分
-3db帶寬: 140MHz
電流 - 電源: 26mA
電流 - 輸出 / 通道: 4mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SO
包裝: 管件
其它名稱: 935275245112
SA5212AD/01
SA5212AD/01-ND
Philips Semiconductors
Product specification
SA5212A
Transimpedance amplifier (140MHz)
1998 Oct 07
7
TEST CIRCUITS (Continued)
GND2
Test Circuit 8
OUT +
OUT –
GND1
IN
DUT
IIN (A)
5V
VOUT (V)
+
Typical Differential Output Voltage
vs Current Input
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–200
–160
–120
–80
–40
0
40
80
120
160
200
DIFFERENTIAL
OUTPUT
VOL
T
AGE
(V)
CURRENT INPUT (
A)
NE5212A TEST CONDITIONS
Procedure 1
RT measured at 30A
RT = (VO1 – VO2)/(+30A – (–30A))
Where: VO1 Measured at IIN = +30A
VO2 Measured at IIN = –30A
Procedure 2
Linearity = 1 – ABS((VOA – VOB) / (VO3 – VO4))
Where: VO3 Measured at IIN = +60A
VO4 Measured at IIN = –60A
V
OA +
R
T @
(
) 60mA) ) V
OB
V
OB +
R
T @
(
* 60mA) ) V
OB
Procedure 3
VOMAX = VO7 – VO8
Where: VO7 Measured at IIN = +130A
VO8 Measured at IIN = –130A
Procedure 4
IIN Test Pass Conditions:
VO7 – VO5 > 20mV and V06 – VO5 > 20mV
Where: VO5 Measured at IIN = +800A
VO6 Measured at IIN = –80A
VO7 Measured at IIN = +130A
VO8 Measured at IIN = –130A
SD00340
Figure 6. Test Circuit 8
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