參數(shù)資料
型號(hào)： SA5209N
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： Wideband variable gain amplifier
中文描述： 0 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件頁(yè)數(shù)： 4/17頁(yè)
文件大小： 202K
代理商： SA5209N
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
4
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C, V
CC1
= V
CC2
= +5.0V, V
AGC
= 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX
R
BG
Bandgap loading
Over temperature
1
2
10
k
V
AGC
AGC DC control voltage range
Over temperature
1
0-1.3
V
BAGC
I
AGC pin DC bias current
AGC in DC bias current
0V<V
AGC
<1.3V
Over temperature
1
-0.7
-6
μ
A
-10
NOTES:
1. “Over Temperature Range” testing is as follows:
SA is -40 to +85
°
C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C, V
CC1
= V
CC2
= +5.0V, V
AGC
= 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX
BW
-3dB bandwidth
600
850
MHz
Over temperature
1
500
GF
Gain flatness
DC - 500MHz
+0.4
dB
Over temperature
1
+0.6
V
IMAX
Maximum input voltage swing (single-ended) for
linear operation
2
200
mV
P-P
V
OMAX
Maximum output voltage swing (single-ended)
for linear operation
2
R
L
= 50
R
L
= 1k
400
mV
P-P
V
P-P
dB
1.9
NF
Noise figure (unmatched configuration)
R
S
= 50
, f = 50MHz
9.3
V
IN-EQ
Equivalent input noise voltage spectral density
f = 100MHz
2.5
nV/
√
Hz
S12
Reverse isolation
f = 100MHz
-60
dB
G/
V
CC
Gain supply sensitivity (single-ended)
0.3
dB/V
G/
T
Gain temperature sensitivity
R
L
= 50
0.013
dB/
°
C
C
IN
Input capacitance (single-ended)
2
pF
BW
AGC
P
O-1dB
-3dB bandwidth of gain control function
20
MHz
1dB gain compression point at output
f = 100MHz
-3
dBm
P
I-1dB
1dB gain compression point at input
f = 100MHz, V
AGC
=0.1V
-10
dBm
IP3
OUT
Third-order intercept point at output
f = 100MHz, V
AGC
>0.5V
+13
dBm
IP3
IN
Third-order intercept point at input
f = 100MHz, V
AGC
<0.5V
+5
dBm
G
AB
Gain match output A to output B
f = 100MHz, V
AGC
= 1V
0.1
dB
NOTE:
1. “Over Temperature Range” testing is as follows:
SA is -40 to +85
°
C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
2. With R
L
> 1k
, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With R
L
= 50
, overload
occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
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