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參數(shù)資料
| 型號： | SA25F020E |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 29/37頁 |
| 文件大小： | 560K |
| 代理商： | SA25F020E |
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SA25F020 Advanced Information
SAIFUN
29
Bulk Erase (BE)
The BE instruction sets all bits in the
memory array to 1. Before it can be
executed, two separate instructions must
be carried out. The device must first be
write enabled via the WREN instruction,
and then a BE sequence, which consists of
four bytes plus data, may be executed. The
address of the memory locations to be
written must be outside the protected
address field location selected by the Block
Write Protection level. During an internal
BE cycle, all commands are ignored except
the RDSR instruction.
A BE instruction requires the following
sequence:
1. After the CSb line is pulled low to
select the device, the BE opcode is
transmitted via the SI line.
2. Erasing begins after the CSb pin is
brought
high.
low-to-high transition must occur
during
the
SCK
immediately after the clock in the
last opcode bit.
The
CSb
pin's
low
time,
As soon as CSb is driven high, the
self-timed BE cycle (whose duration is
defined as T
BE
) is initiated. While the BE
cycle is in progress, the status register may
be read to check the value of the /RDY bit.
The /RDY bit is 1 during the self-timed BE
cycle, and 0 when it is completed. The
WEN bit is reset at some unspecified time
before the cycle is completed. The
instruction sequence is shown in Figure 19.
The SA25F020 is automatically returned to
the Write Disable state at the completion of
a BE cycle.
NOTES:
1. If the device is not write enabled,
the
device
ignores
instruction and returns to the
standby state when CSb is brought
high. A new CSb falling edge is
required to re-initiate the serial
communication.
2. A BE instruction can be applied
only if both Block Protect (BP1,
BP0) bits (as described in Table 8,
page 18, and Table 9, page 21)
are 0.
the
BE
3
2
7
6
5
4
0
Instruction
SCK
SI
1
CS
Figure 19. Bulk Erase (BE) Instruction Sequence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SA25F020LEM8 | RES 69.8 OHM 1/10W .5% 0805 SMD |
| SA25F020LEM8F | 4 Mbit Uniform Sector, Serial Flash Memory |
| SA25F020LEMLF | 4 Mbit Uniform Sector, Serial Flash Memory |
| SA25F020LEMLFF | 4 Mbit Uniform Sector, Serial Flash Memory |
| SA25F020LEN | RES 82.5 OHM 1/10W .5% 0805 SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SA25F020LEM8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
| SA25F020LEM8F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
| SA25F020LEM8FX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
| SA25F020LEMLF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
| SA25F020LEMLFF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
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