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參數(shù)資料
| 型號： | S9868 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | 3 X 4.50 MM, 1.50 MM HEIGHT, MINIATURE PACKAGE-6 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 110K |
| 代理商： | S9868 |
Si PIN photodiode
S9868
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Cat. No. KPIN1074E01
Mar. 2006 DN
2
KPINB0307EA
s Spectral response
s Dimensional outline (unit: mm)
0
200
WAVELENGTH (nm)
PHO
T
O
SENSITIVITY
(A/W)
400
600
800
1000
1200
0.1
0.2
0.3
0.4
0.5
(Typ. Ta=25 C)
QE=100 %
KPINB0308EA
s Dark current vs. reverse voltage
100 fA
0.01
REVERSE VOLTAGE (V)
DARK
CURRENT
0.1
1
10
100
1 pA
10 pA
100 pA
1 nA
(Typ. Ta=25 C)
KPINB0309EA
s Terminal capacitance vs. reverse voltage
100 fF
1 pF
0.1
REVERSE VOLTAGE (V)
TERMINAL
CAP
A
CIT
ANCE
1
10
100
10 pF
100 pF
(Typ. Ta=25 C, f=1 MHz)
KPINB0310EA
s Response waveform example
TIME (ns)
RELATIVE
OUTPUT
(%)
20 ns/div.
0
110
100
90
80
70
60
50
40
30
20
10
(Ta=25 C,
λ=780 nm, VR=2.5 V)
CONVENTIONAL
TYPE
KPINA0103EA
4.5
CERAMIC
0.95
(0.25)
0.5
1.0
1.5 ± 0.15
ACTIVE AREA
0.8
AR GLASS
PHOTOSENSITIVE
SURFACE
2.0
1.25
1.0
(6
×
)0.5
1.0
(6 ×) R0.2
NC
CATHODE
NC
ANODE
NC
(1.9)
3.0
Tolerance unless otherwise noted: ±0.1
Chip position accuracy with respect to the
package center
X, Y
≤±0.2, θ≤±2
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