
S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 G
) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S9295 series also features low noise and low NEP,
and is especially suitable for NOx detection. The active area of the photodiode is internally connected to the GND terminal making it highly
resistant to EMC noise.
Features
l
Large active area: 10 × 10 mm
l
UV to NIR Si photodiode optimized for precision photometry
l
Compact hermetic package with sapphire window
l
High precision FET input operational amplifier
l
High gain: Rf=10 G
l
Low noise and NEP
l
High cooling efficiency
S9295 :
T=50 C
S9295-01:
T=30 C
l
High stability with thermistor
l
Highly resistant to EMC noise
Applications
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NOx detection
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Low-light-level measurement, etc.
P H O T O D I O D E
Si photodiode with preamp
S9295 series
Large area photodiode integrated with op amp and TE-cooler
S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
I
Absolute maximum ratings
I
Recommended operating conditions
Parameter
Symbol
Value
Supply voltage (preamp)
Vcc
±20 V
Operating temperature
Topr
-30 to +60
°
C
Storage temperature
Tstg
-40 to +80
°
C
TE-cooler allowable voltage *
1
Vte
5 V *
2
TE-cooler allowable current
Ite
1 A
Thermistor power dissipation
Pth
0.2 mW
*1: Ripple Max.: 10 %
*2: S9295-01: 3.7 V
Parameter
Symbol
Vcc
Ite
Pth
R
L
Value
±5 to ±15 V
0.8 A Max.
0.03 mW Max.
100 k
Min.
Supply voltage (preamp)
TE-cooler current
Thermistor power dissipation
Load resistance
I
Electrical and optical characteristics (Typ. Vcc=±15 V, R
L
=1 M
)
S9295
T= -25
°
C
S9295-01
T= -5
°
C
Parameter
Symbol
Condition
Unit
Spectral response range
Peak sensitivity wavelength
Feedback resistance (built-in) *
3
λ
190 to 1100
960
10
nm
nm
G
λ
p
Rf
λ
=200 nm
λ
=
λ
p
Dark state, f=10 Hz
λ
=
λ
p, f=10 Hz
Dark state
-3 dB
0.9
5.1
20
4
±2
190
0.9
5.1
25
5
±2
180
Photo sensitivity
S
V/nW
Output noise voltage
Noise equivalent power
Output offset voltage
Cut-off frequency
Output voltage swing
Supply current
Thermistor resistance
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
Vn
NEP
Vos
fc
Vo
Icc
Rth
μVrms/Hz
1/2
fW/Hz
1/2
mV
Hz
V
mA
k
13
0.3
Dark state
86
30
1