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參數(shù)資料
| 型號： | S8C5H30L |
| 廠商： | 意法半導體 |
| 英文描述： | LOW GATE CHARGE StripFET III MOSFET |
| 中文描述： | 低柵極電荷StripFET三MOSFET的 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 442K |
| 代理商： | S8C5H30L |
3/11
STS8C5H30L
ELECTRICAL CHARACTERISTICS(CONTINUED)
Table 7: Switching On
Table 8: Switching Off
Table 9: Source-Drain Diodef
Symbol
I
SD
Source-drain Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V, I
D
= 4 A,
R
G
= 4.7
,
V
GS
= 4.5 V
P-CHANNEL
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load see, Figure 28)
n-ch
p-ch
n-ch
p-ch
12
25
14.5
35
ns
ns
ns
ns
Q
g
Total Gate Charge
V
DD
= 24 V, I
D
= 8 A,
V
GS
= 5 V
P-CHANNEL
V
DD
= 24 V, I
D
= 4 A,
V
GS
= 5 V
(see, Figure 31)
n-ch
p-ch
7
12.5
10
16
nC
nC
Q
gs
Gate-Source Charge
n-ch
p-ch
2.5
5
nC
nC
Q
gd
Gate-Drain Charge
n-ch
p-ch
2.3
3
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V, I
D
= 4 A,
R
G
= 4.7
,
V
GS
= 4.5 V
P-CHANNEL
V
DD
= 15 V, I
D
= 2.5 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load see, Figure 28)
n-ch
p-ch
n-ch
p-ch
23
125
8
35
ns
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
8
5
Unit
A
A
n-ch
p-ch
I
SDM
(2)
Source-drain Current (pulsed)
n-ch
p-ch
32
20
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 8 A, V
GS
= 0
I
SD
= 5 A, V
GS
= 0
I
SD
= 8 A, di/dt = 100 A/μs
V
DD
= 15V, T
j
= 150°C
n-ch
p-ch
1.5
1.2
V
V
t
rr
Reverse Recovery Time
P-CHANNEL
I
SD
= 5 A, di/dt = 100 A/μs
V
DD
= 15V, T
j
= 150°C
(see test circuit, Figure 29)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
15
45
5.7
36
0.76
1.6
ns
ns
nC
nC
A
A
Q
rr
Reverse Recovery Charge
I
RRM
Reverse Recovery Current
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