- 您現在的位置：買賣IC網 > PDF目錄385812 > S8202 (Polyfet RF Devices) SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR PDF資料下載
參數資料
| 型號： | S8202 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | S8202 |
polyfet rf devices
S8202
10
Single Ended
SO8
12.0
1.2
20.0
7.00 C/W
65
0.6
2.80
0.4
45
2.00
1.00
1.8
30
0.04
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
0.40
20.00
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
0.40
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 0.40
1,000
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
1,000
1,000
Common Source Input Capacitance
70
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS (
8.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
8.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
28.0
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
VDMOS
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
REVISION 03/28/2001
25 C )
WATTS OUTPUT )
相關PDF資料 |
PDF描述 |
|---|---|
| SA120C | 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS |
| SA170C | 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS |
| SA120CA | 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS |
| SA170CA | 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS |
| SA8.0C | 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S-8202-01 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| S-8202-1 | 制造商:Cooper Bussmann 功能描述:Fuse Block 20A 300VDC/300VAC Quick Connect Bolt 制造商:Cooper Bussmann 功能描述:BREAKAWAY FUSEBLOCK - Bulk 制造商:COOPER BUSSMANN 功能描述:Fuse Block 20A 300VDC/300VAC Quick Connect Bolt |
| S-8202-10 | 制造商:Cooper Bussmann 功能描述:FUSE BLOCKS 20PIN - Bulk 制造商:Cooper Bussmann 功能描述:Fuse Block 20A 300VDC/300VAC Quick Connect Bolt 制造商:COOPER BUSSMANN 功能描述:Fuse Block 20A 300VDC/300VAC Quick Connect Bolt |
| S-8202-10-R | 制造商:Cooper Bussmann 功能描述:FUSEHOLDER 6.3X32MM 10P 制造商:Cooper Bussmann 功能描述:FUSEHOLDER, 6.3X32MM, 10P 制造商:Cooper Bussmann 功能描述:FUSEHOLDER, 6.3X32MM, 10P; Voltage Rating V DC:300V; Voltage Rating V AC:300V; Fuse Current:20A; Fuse Holder Type:Fuse Block; Holder Terminals:Quick Connect; No. of Fuses:10; Fuse Size Held:1/4" x 1-1/4", 6.3mm x 32mm, 3AB, 3AG, 0; ;RoHS Compliant: Yes |
| S-8202-11 | 制造商:Cooper Bussmann 功能描述:Fuse Block 20A 300VDC/300VAC Quick Connect Bolt |
發(fā)布緊急采購，3分鐘左右您將得到回復。