參數(shù)資料
型號(hào): S72NS512PE0AHGL02
廠商: SPANSION LLC
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA133
封裝: 11 X 10 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 771K
代理商: S72NS512PE0AHGL02
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
Publication Number S72NS-P_00
Revision 07
Issue Date September 24, 2008
Features
Power supply voltage of 1.7 V to 1.95 V
Burst Speeds
– Flash = 66 MHz, 83 MHz
– DRAM = 133 MHz, 166 MHz
Packages
– 11.0 x 10.0 mm, 133-ball MCP
– 8.0 x 8.0 mm, 133-ball MCP
– 12.0 x 12.0 mm, 128-ball PoP
Operating Temperature of –25°C to +85°C
General Description
This document contains information on the S72NS-P MCP stacked products. Refer to the S29NS-P data sheet (S29NS-P_00)
for full electrical specifications of the Flash memory component.
The S72NS Series is a product line of stacked products (MCPs and PoPs), and consists of:
NS family multiplexed Flash memory die
DDR DRAM
The products covered by this document are listed in the tables below.
For detailed specifications, please refer to the individual data sheets.
S72NS-P MCP/PoP Memory System
Solutions
MirrorBit Flash Memory and DRAM
128/256/512 Mb (8/16/32 M x 16 bit), 1.8 Volt-only, Multiplexed
Simultaneous Read/Write, Burst Mode Flash Memory
128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus
Data Sheet (Advance Information)
Flash Density
DRAM Density
128 Mb
256 Mb
128 Mb
S72NS128PD0
256 Mb
S72NS256PD0
512 Mb
S72NS512PD0
S72NS512PE0
Density
Manufacturer
Publication Number
128
DRAM1
DRAM_07
DRAM5
SDRAM_07 (90 nm)
DRAM_15 (70 nm)
Density
Manufacturer
Publication Number
256
DRAM1
DRAM_08
DRAM5
SDRAM_11 (90 nm)
DRAM_14 (70 nm)
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