
146
SRAM
SRAM_Type01_02A0 June 15, 2004
Prelimin ary
SRAM
4/8 Megabit CMOS SRAM
Common Features
Process Technology: Full CMOS
Power Supply Voltage: 2.7~3.3V
Three state outputs
Notes:
1. UB#, LB# swapping is available only at x16. x8 or x16 select by BYTE# pin.
Pin Description
Version
Density
Organization
(ISB1, Max.)
Standby
(ICC2, Max.)
Operating
Mode
F
4Mb
x8 or x16 (note 1)
10 A
22 mA
Dual CS, UB# / LB# (tCS)
G
4Mb
x8 or x16 (note 1)
10 A
22 mA
Dual CS, UB# / LB# (tCS)
C
8Mb
x8 or x16 (note 1)
15 A
22 mA
Dual CS, UB# / LB# (tCS)
D
8Mb
X16
TBD
Dual CS, UB# / LB# (tCS)
Pin Name
Description
I/O
CS1#, CS2
Chip Selects
I
OE#
Output Enable
I
WE#
Write Enable
I
BYTE#
Word (VCC)/Byte (VSS) Select
I
A0~A17 (4M)
A0~A18 (8M)
Address Inputs
I
SA
Address Input for Byte Mode
I
I/O0~I/O15
Data Inputs/Outputs
I/O
VCC
Power Supply
-
VSS
Ground
-
DNU
Do Not Use
-
NC
No Connection
-