參數(shù)資料
型號(hào): S71GL064A80BFW0F3
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 48/102頁
文件大?。?/td> 1606K
代理商: S71GL064A80BFW0F3
48
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
A d v a n c e I n f o r m a t i o n
bit programming, a modified programming method is required; please contact
your local Spansion representative.
Any bit in a w rite buffer address range
cannot be programmed from “ 0” back to a “ 1.”
Attempting to do so may
cause the device to set DQ5= 1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC
pin depending on the particular product. When the system asserts V
HH
on the
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC
pin to accelerate the operation.
Note that the
WP#/
ACC pin must not be at V
HH
for operations other than accelerated programming, or device damage may re-
sult. WP# has an internal pullup; when unconnected, WP# is at V
IH
.
Figure 3
illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations–
“AC Characteristics” section on page 67
section for pa-
rameters, and
Figure 14
for timing diagrams.
相關(guān)PDF資料
PDF描述
S71PL254 STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL032J STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL032J04 STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL032J04-0B STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL032J04-0F STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
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