參數(shù)資料
型號: S6968-01
廠商: Hamamatsu Photonics
英文描述: MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
中文描述: 硅PIN光電二極管ヵ14毫米鏡頭塑料封裝
文件頁數(shù): 1/2頁
文件大?。?/td> 104K
代理商: S6968-01
P H O T O D I O D E
Si PIN photodiode
S6801/S6968 series
φ
14 mm lens plastic package
Features
l
Plastic packages with
φ
14 mm lens
l
High-speed response (S6968 series):
50 MHz Typ. (V
R
=10 V,
λ
=850 nm)
l
High sensitivity (S6801, S6968): 0.63 A/W (
l
=850 nm)
l
Directivity: 35 (half angle)
l
Visible-cut type: S6801-01, S6968-01
l
Active area size:
φ
14 mm (lens diameter)
l
Effective active area: 150 mm
2
Applications
l
Spatial light transmission
l
Optical communication
l
Optical data link
l
High-speed optical measurement
l
Optical switch
l
Laser radar
S6801/S6968 series is a Si PIN photodiode molded into a plastic package with a
φ
14 mm lens. Four types are provided, S6801, S6968 with a
clear plastic package and S6801-01, S6968-01 with a visible-cut package.
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Operating
temperature
Topr
(°C)
Active area
size
Effective active
area
Reverse
voltage
V
R
Max.
(V)
Storage
temperature
Tstg
(°C)
Type No.
Package
(mm)
(mm
2
)
S6801
S6801-01
S6968
S6968-01
Plastic
φ
14
150
35
-25 to +85
-40 to +100
I
Electrical and optical characteristics
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
Photo
sensitivity
S
λ
=850 nm
Short circuit
current
Isc
100
lx
2856 K
Dark
current
I
D
V
R
=10 V
Temp.
coefficient
of
I
D
T
CID
Cut-off
frequency
fc
V
R
=10 V
R
L
=50
λ
=850 nm, -3 dB
Min.
(MHz)
Terminal
capacitance
Ct
V
R
=10 V
f=1 MHz
Half *
angle
Type No.
(nm)
(nm)
Min.
(A/W)
0.57
0.5
0.57
0.5
Typ.
(A/W)
0.63
0.55
0.63
0.55
Min.
(μA)
95
64
83
57
Typ.
(μA)
120
80
104
72
Typ.
(nA)
Max.
(nA)
(times/° C)
Typ.
(MHz)
Typ.
(pF)
Max.
(pF) (degree)
S6801
S6801-01
S6968
S6968-01
* Photocurrent generated in a photodiode varies depending on the incident light angle. The half angle is the incident light angle at
which the photocurrent is 50 % of that generated when the incident light is perpendicular to the photodiode.
320 to 1100
700 to 1100
320 to 1060
700 to 1060
960
0.5
10
7
15
40
80
920
0.5
5
1.15
30
50
50
100
±35
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